? 2000 ixys all rights reserved 1 - 2 vue 75-06no7 eco-pac tm three phase rectifier bridge
i dav = 86 a v rrm = 600 v t rr = 35 ns v rsm v rrm typ v v 600 600 vue 75-06no7 symbol conditions maximum ratings i dav t c = 100c, module 86 a i davm 90 a i fsm t vj = 45c t = 10 ms (50 hz), sine 250 a v r = 0 t = 8.3 ms (60 hz), sine 275 a t vj = t vjm t = 10 ms (50 hz), sine 215 a v r = 0 t = 8.3 ms (60 hz), sine 235 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 315 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 320 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 230 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 230 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m4) 1.5-2/14-18 nm/lb.in. weight typ. 19 g features package with dcb ceramic base plate in low profile isolation voltage 3000 v~ planar passivated chips low forward voltage drop leads suitable for pc board soldering applications supplies for dc power equipment input and output rectifiers for high frequency battery dc power supplies field supply for dc motors advantages space and weight savings improved temperature and power cycling capability small and light weight low noise switching data according to iec 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. symbol conditions characteristic values typ. max. i r v r = v rrm t vj = 25c 0.25 ma v r = v rrm t vj = t vjm 1.0 ma v f i f = 30 a t vj = 25c 1.57 v v t0 for power-loss calculations only 0.98 v r t 8m r thjc per diode; dc current 0.9 k/w r thch per diode, dc current, typ. 0.3 k/w i rm i f = 50 a, -dif/dt = 100 a/s 6 tbd a v r = 100 v, l = 0.05 mh, t vj = 100c t rr i f = 1 a; -di/dt = 200 a/s; v r = 30 v, t vj = 25c 35 tbd ns a max. allowable acceleration 50 m/s 2 d s creeping distance on surface 11.2 mm d a creepage distance in air 9.7 mm ixys reserves the right to change limits, test conditions and dimensions. 032 d k a h n dimensions in mm (1 mm = 0.0394")
? 2000 ixys all rights reserved 2 - 2 vue 75-06no7 200 600 1000 0 400 800 70 80 90 100 110 120 130 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 100 1000 0 500 1000 1500 2000 2500 3000 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v nc a/ m s a/ m s t rr ns t fr z thjc a/ m s s vbe55-06no7/VUE75-06NO7 i f = 60a i f = 30a i f = 15a t vj = 100 c v r = 300v t vj = 100 c i f = 30a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 7 transient thermal resistance junction to case t vj =25 c t vj =100 c t vj =150 c note: fig. 2 to fig. 6 shows typical values constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3012 0.0052 2 0.116 0.0003 3 0.0241 0.0004 4 0.4586 0.0092
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